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TechTrek  |  SKU: LRC20Z500GG8

Kioxia Exceria 500GB M.2 PCIe NVMe Solid State Drive

R 579.00 ZAR R 699.00
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Kioxia Exceria 500GB M.2 PCIe NVMe SSD – 500GB capacity with 10% overprovisioning (46.3GB). Uses BiCS FLASH™ TLC 112-layer 3D NAND technology, PCIe 3.0 x4 interface with NVMe 1.3 protocol, Sequential read speed up to 2,100 MB/s and write speed up to 1,700 MB/s, Random read/write IOPS 360,000/400,000. Endurance rated at 200 TBW, MTBF 1.5 million hours, with SLC write cache and charge trap topology, Form factor M.2 2280 single-sided, dimensions 80.15 x 22.15 x 2.23 mm. Operates 0-85°C, Retail Box, 1 year warranty

Kioxia Exceria 500GB M.2 PCIe NVMe SSD - 500GB capacity with 10% overprovisioning (46.3GB). Uses BiCS FLASH™ TLC 112-layer 3D NAND technology, PCIe 3.0 x4 interface with NVMe 1.3 protocol, Sequential read speed up to 2,100 MB/s and write speed up to 1,700 MB/s, Random read/write IOPS 360,000/400,000. Endurance rated at 200 TBW, MTBF 1.5 million hours, with SLC write cache and charge trap topology, Form factor M.2 2280 single-sided, dimensions 80.15 x 22.15 x 2.23 mm. Operates 0-85°C, Retail Box, 1 year warranty
 
Product Overview
The Kioxia Exceria 500GB M.2 PCIe NVMe SSD offers high-speed storage performance in a compact form factor. With sequential read speeds of up to 2,100 MB/s and write speeds of 1,700 MB/s, it's ideal for boosting your system's responsiveness.
 
 
 
Specifications
•Product code: LRC20Z500GG8
•Description: Kioxia Exceria 500GB M.2 PCIe NVMe Solid State Drive
•Capacity: 500 GB
•Overprovisioning: 46.3 GB / 10.0 %
•Part Number: LRC20Z500GG8
•Sequential Read: 2,100 MB/s
•Sequential Write: 1,700 MB/s
•Random Read: 360,000 IOPS
•Random Write: 400,000 IOPS
•Endurance: 200 TBW
•MTBF: 1.5 Million Hours
•Drive Writes per Day (DWPD): 0.2
•SLC Write Cache: Yes
•Form Factor: M.2 2280 (Single-Sided)
•Interface: PCIe 3.0 x4
•Protocol: NVMe 1.3
•Name: BiCS5
•Type: TLC
•Technology: 112-layer
•Speed: 1066 MT/s
•Capacity: 4 chips @ 1 Tbit
•Toggle: 4.0
•Topology: Charge Trap
•Dies per Chip: 2 dies @ 512 Gbit
•Planes per Die: 2
•Word Lines: 128 per NAND String
•87.5% Vertical Efficiency
•Read Time (tR): 56 µs
•Program Time (tProg): 484 µs
•Die Read Speed: 571 MB/s
•Die Write Speed: 66 MB/s
•Page Size: 16 KB
•Block Size: 1344 Pages
•Plane Size: 448 Blocks
•Manufacturer: Phison
•Name: PS5012-E12S-32
•Architecture: ARM 32-bit Cortex-R5
•Core Count: Quad-Core
•Frequency: 667 MHz
•Foundry: TSMC
•Process: 12 nm
•Flash Channels: 8 @ 667 MT/s
•Chip Enables: 4
•Controller Features: DRAM
•TRIM: Yes
•SMART: Yes

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